Note: Updated 2011 Publications will be Added Here ASAP
G. Xu, et al. "Effect of Edge Disorders on the
Scaling Behaviors of Graphene Nanostructures",
AA11.4, MRS Fall Meeting, Boston (2011)
Education:
Ph.D. Electrical Engineering (Solid State Electronics), UCLA, 2006 - Present
M. S. Electrical Engineering (Photonics and Optoelectronics), Tsinghua University, China, 2006
B. S. Fundamental Science (Mathematics and Physics), Tsinghua University, China, 2003
Academic Experiences :
UCLA, Kang Wang Lab |
Los Angeles, CA |
Graduate Research Assistant |
2006-Present |
Multi-institutional collaboration among Lawrence Berkeley National Lab (LBNL), IBM T. J. Watson Research Center, University of Southern California, University of California at Riverside and other departments from UCLA (Materials, Chemistry and Biochemistry). Main results include:
Variability effects in carbon electronics: 1) Revealed an abnormal 1/f noise pattern in graphene devices originating from the non-uniform carrier distribution; proposed a new noise model that can benefit future all-graphene circuit modeling. 2)Revealed a strong correlation between 1/f noise in graphene nanoribbon (GNR) devices with their band structures; provided a noise-based metrology to probe the quantum transport in GNRs
Top-down scalability in graphene electronics: Revealed the critical role of edge effect on the scaling behavior in graphene devices; the scaling behavior can be tuned by varying the gate bias, the number of layers, or the width of graphene devices. These findings are critical in realizing top-down scalable graphene electronics.
High-performance carbon electronics: 1) Wafer-scale aligned CNT-array transistors with Ion/Ioff>10^3 and ~40% noise reduction by a high-k top-gate structure; 2) Nanowire-mask based fabrication of graphene nanoribbon (GNR) devices with ~40% noise reduction and sub-5nm line-width-roughness for 30nm-width GNRs.
Impact of my research:
1) Media reports entitled “Turning down the noise in graphene” and “The noise about graphene” (2010， Link included)
2) Invited talk in China, Japan, and LBNL Annual User Meeting (2009-2010)
3) Outstanding Theme Poster Prize in 6th Annual FCRP FENA review (2010)
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UCLA, EE Department |
Los Angeles, CA |
Graduate Teaching Assistant |
2007-2010 |
Semiconductor device physics (undergraduate, two quarters): Led recitation lectures and discussion sessions, conducted office hours, and designed the exams and homework.
Semiconductor device fabrication (undergraduate and graduate, two quarters): Led full Si-based MOSFET fabrication process in Level C clean-room, led pre-lab lectures, graded exams and lab reports; received excellent student feedback (Rating 4.9/5.0): “VERY dedicated and effective TA for this course in terms of availability, knowledge of the subject, understanding, communication and overall awesomeness.”
Research tutoring (undergraduate and graduate, two academic years): Tutored two graduate students and one undergraduate student on their degree-required projects/thesis entitled: 1) characterization and modeling of RF performance in CNT-array transistor; 2) fabrication and characterization of graphene nanoribbon devices.
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Tsinghua University, EE Department |
Beijing, China |
Graduate Research Assistant and Teaching Assistant |
2003-2006 |
Low-dispersion and low-loss micro-structured fiber design for optical communication: 1) photonic crystal fibers: broadband dispersion compensation near 1.55um window (experimentally proved); 2) Bragg fibers: low-loss single-mode transmission at near-infrared windows from 1.34um to 2.94um with a broad bandwidth. Both designs are fabrication-accessible.
Research tutoring (undergraduate, one academic year): Tutored one undergraduate student on his degree-required project: Design of highly birefringent photonic crystal fiber and spiral Bragg fiber |
Journal Papers (Accepted Only, Downloadable): |
1. G. Xu, et al. Line-width Roughness in Nanowire-mask Based Graphene Nanoribbons, Appl. Phys. Lett. 98, 243118 (2011)
2. G. Xu, et al. Edge Effect on Resistance Scaling Rules in Graphene Nanostructures, Nano Lett. 11, 1082-1086 (2011)
3. G. Xu, et al. Effect of Spatial Charge Inhomogeneity on 1/f Noise Behavior in Graphene, Nano Lett. 10, 3312-3317 (2010)
4. G. Xu, et al. Enhanced Conductance Fluctuation by Quantum Confinement Effect in Graphene Nanoribbons, Nano Lett. 10, 4590-4594 (2010)
5. G. Xu, et al. Low-Noise Submicron Channel Graphene Nanoribbons, Appl. Phys. Lett. 97, 019034 (2010)
6. G. Xu, et al. Low-Frequency Noise in Top-Gated Ambipolar Carbon Nanotube Field Effect Transistors, Appl. Phys. Lett. 92, 223114 (2008)
7. G. Xu, et al. Loss Characteristics of Single-HE11-Mode Bragg Fiber, IEEE J. Lightwave Technol. 25, 359-366 (2007)
8. G. Xu, et al. Large Dispersion Properties and Nonlinear Effects in Up/Down Doping Honeycomb Photonic Crystal Fiber, Optical Engineering, 45, 125004, (2006)
9. E. B. Song, et al. Robust bi-stable memory operation in singlelayer
graphene ferroelectric memory, Appl. Phys. Lett. 99, 042109 (2011, co-author)
10. E. B. Song, et al. Visibility and Raman Spectroscopy of Mono and Bilayer Graphene on Crystalline Silicon, Appl. Phys. Lett. 96, 081911 (2010, co-author)
11. C. Zeng, et al, Tunneling Spectroscopy of Metal-Oxide-Graphene Structure, Appl. Phys. Lett. 97, 032104 (2010, co-author) |
Conference Papers/Talks (Downloadable): |
1. "Effect of Edge Disorders on the Scaling Behaviors of Graphene Nanostructures",
AA11.4, MRS Fall Meeting, Boston (2011)
2. "Electronic Transport in Graphene and Graphene Nanoribbons", P21, DOE BES E-Beam Microcharacterization Centers and Nanoscale Science Research Centers Contractors’ Meeting, The Westin Annapolis (2011)
3. "Variability Effects in Graphene: Probing its Charge Distribution, Band Structure and Scaling
Behavior", P36, Nature Conference - Graphene: The Road to Applications, Boston (2011).
4. "Low-frequency Noise of Graphene Nanostructures for Device and Material Characterizations", Y6.7, MRS Spring Meeting, San Francisco (2011).
5. "Enhanced Conductance Fluctuation by Quantum Confinement Effect in Graphene Nanoribbons ", T37. 00008, APS March Meeting, Dallas (2011).
6. "Nanowire-mask based fabrication of high mobility and low noise graphene nanoribbon short-channel field-effect transistors", 68th IEEE Device Research Conference (DRC), III-11, 71-72, Notre Dame (2010).
7. "Electron-Hole Puddle Induced Scattering and 1/f Noise Behavior in Graphene," APS March Meeting, BAPS.2010.MAR.L21.9, Portland (2010).
8. "Effect of Spatial Charge Inhomogeneity on 1/f Noise Behavior in Graphene" 8th International Workshop on Future Information Processing Technologies,Kyoto, Japan, invited (2010)
9. "Effect of Spatial Charge Inhomogeneity on 1/f Noise Behavior in Graphene" 16th International Conference on Superlattices, Nanostructures and Nanodevices, IT-27, Beijing, China, invited (2010)
10. "Random Telegraph Signal and Flicker Noise in Carbon Electronics: Carbon Nanotube and Graphene," LBNL ALS/TMF User Meeting, Berkeley, invited (2009).
11. "Electron-Hole Puddle Related Scattering in Graphene," LBNL ALS/TMF User Meeting, TMF-34D-CARB, Berkeley (2009).
12. "Fundamental Studies of Graphene on Crystalline Silicon," Nano-DDS Conference, IV (S1) Graphene #3, Fort Lauderdale (2009)
13. "Low-Frequency Noise in Top-Gated Ambipolar Carbon Nanotube Field-Effect Transistors," APS March Meeting, BAPS.2008.MAR.B35.3, New Orleans (2008).
14. "Optical properties of solid core honeycomb photonic crystal fiber with different doping levels", 20th International Optics Conference, Proc. SPIE, 6025, 602505, Changchun, China (2006).
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My advisor and main collaborators (Link included):
Prof. Kang Wang, UCLA EE (Advisor)
Prof. Chongwu Zhou, USC EE
Prof. Xiangfeng Duan, UCLA Chem. and Biochem.
Dr. Yuegang Zhang, LBNL Molecular Foundry
Prof. Yu Huang, UCLA MSE
Acknowledgement:
FCRP FENA, DOE, DARPA
Note: The copyright of downloadable papers belongs to the journal/conference publishers
Last updated:
Aug. 2011
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